Computational flexoelectronics
A framework for analyzing PN junctions in flexoelectric semiconductors
- verfasst von
- Han Hu, Zhaowei Liu, Qiong Liu, Xiaoning Jiang, Xiaoying Zhuang, Timon Rabczuk
- Abstract
The miniaturization of electronic devices has intensified the need to tailor material properties at the nanoscale, where flexoelectricity becomes prominent. This paper investigates flexoelectronics—a novel field that harnesses strain gradients and flexoelectric polarization to modulate electronic behavior in semiconductors. Existing models often rely on linearized constitutive relations that fail to capture the behavior of semiconductors under large carrier perturbations. To address this limitation, this work presents a novel computational framework for the fully-coupled physics of flexoelectronics based on isogeometric analysis. The framework robustly models the nonlinear interplay among elasticity, flexoelectric polarization, and carrier transport in PN junctions, overcoming the constraints of traditional linearized approaches. Verification against analytical benchmarks confirms the accuracy of the method. Applications to two-dimensional PN junctions reveal a previously unreported competing mechanism between drift and diffusion currents under flexoelectric modulation. Furthermore, the framework demonstrates that device strain sensitivity is a tunable property that can be optimized by adjusting the junction's position, providing a clear pathway for enhanced flexoelectronic device design.
- Organisationseinheit(en)
-
Institut für Photonik
- Externe Organisation(en)
-
Hohai University
North Carolina State University
Tongji University
Bauhaus-Universität Weimar
- Typ
- Artikel
- Journal
- International Journal of Mechanical Sciences
- Band
- 305
- ISSN
- 0020-7403
- Publikationsdatum
- 01.11.2025
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Tief- und Ingenieurbau, Allgemeine Materialwissenschaften, Luft- und Raumfahrttechnik, Physik der kondensierten Materie, Meerestechnik, Werkstoffmechanik, Maschinenbau, Angewandte Mathematik
- Elektronische Version(en)
-
https://doi.org/10.1016/j.ijmecsci.2025.110740 (Zugang:
Offen)
